Infineon BFP840FESDH6327XTSA1 NPN RF Bipolar Transistor, 35 mA, 2.25 V, 4-Pin TSFP
Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
TSFP
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
85 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.4 x 0.8 x 0.55mm
Maximum Operating Temperature
+150 °C
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P.O.A.
3000
P.O.A.
3000
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonTransistor Type
NPN
Maximum DC Collector Current
35 mA
Maximum Collector Emitter Voltage
2.25 V
Package Type
TSFP
Mounting Type
Surface Mount
Maximum Power Dissipation
75 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
2.9 V
Maximum Operating Frequency
85 GHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.4 x 0.8 x 0.55mm
Maximum Operating Temperature
+150 °C
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products