Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23

RS Stock No.: 892-2365Brand: InfineonManufacturers Part No.: BFR93AE6327HTSA1
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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

90 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

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P.O.A.

Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23
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P.O.A.

Infineon BFR93AE6327HTSA1 NPN RF Bipolar Transistor, 90 mA, 12 V, 3-Pin SOT-23
Stock information temporarily unavailable.
Select packaging type

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Technical Document

Specifications

Transistor Type

NPN

Maximum DC Collector Current

90 mA

Maximum Collector Emitter Voltage

12 V

Package Type

SOT-23

Mounting Type

Surface Mount

Maximum Power Dissipation

300 mW

Transistor Configuration

Single

Maximum Collector Base Voltage

20 V

Maximum Emitter Base Voltage

2 V

Maximum Operating Frequency

6 GHz

Pin Count

3

Maximum Operating Temperature

+150 °C

Dimensions

2.9 x 1.3 x 1mm

Product details

RF Bipolar Transistors, Infineon

Bipolar Transistors, Infineon

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more