Infineon SIPMOS® N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
25
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.
Production pack (Reel)
25
Stock information temporarily unavailable.
Ideate. Create. Collaborate
JOIN FOR FREE
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- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Package Type
SOT-23
Series
SIPMOS®
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Minimum Gate Threshold Voltage
2.7V
Maximum Power Dissipation
500 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Length
2.9mm
Maximum Operating Temperature
+150 °C
Typical Gate Charge @ Vgs
1.4 nC @ 5 V
Width
1.3mm
Transistor Material
Si
Minimum Operating Temperature
-55 °C
Height
1mm
Product details
Infineon SIPMOS® N-Channel MOSFETs
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products