Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Series
SIPMOS®
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Number of Elements per Chip
1
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P.O.A.
N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126IXTSA1
3000
P.O.A.
N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 Infineon BSS126IXTSA1
Stock information temporarily unavailable.
3000
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
21 mA
Maximum Drain Source Voltage
600 V
Series
SIPMOS®
Package Type
SOT-23
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
700 Ω
Channel Mode
Depletion
Maximum Gate Threshold Voltage
1.6V
Number of Elements per Chip
1