Infineon Dual SiC Dual N-Channel MOSFET, 925 A, 3300 V Tray FF2000UXTR33T2M1BPSA1
Technical Document
Specifications
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Country of Origin
Germany
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P.O.A.
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P.O.A.
1
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Technical Document
Specifications
Brand
InfineonChannel Type
Dual N
Maximum Continuous Drain Current
925 A
Maximum Drain Source Voltage
3300 V
Series
XHP
Package Type
Tray
Mounting Type
Screw Mount
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
SiC
Country of Origin
Germany
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products