Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
750 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
6
Maximum Power Dissipation
1 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Country of Origin
Germany
Stock information temporarily unavailable.
P.O.A.
Infineon FS1150R08A8P3LMCHPSA1 Half Bridge IGBT, 600 A 750 V, Screw Mount
1
P.O.A.
Infineon FS1150R08A8P3LMCHPSA1 Half Bridge IGBT, 600 A 750 V, Screw Mount
Stock information temporarily unavailable.
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonMaximum Continuous Collector Current
600 A
Maximum Collector Emitter Voltage
750 V
Maximum Gate Emitter Voltage
±20V
Number of Transistors
6
Maximum Power Dissipation
1 kW
Configuration
Half Bridge
Mounting Type
Screw Mount
Channel Type
N
Country of Origin
Germany