Infineon CoolMOS™ Silicon N-Channel MOSFET, 31 A, 650 V, 3-Pin TO 263 IPB60R099P7ATMA1
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
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P.O.A.
Each (On a Reel of 1000) (Exc. Vat)
1000
P.O.A.
Each (On a Reel of 1000) (Exc. Vat)
1000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
31 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™
Package Type
TO 263
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
0.099 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
1
Transistor Material
Silicon
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products