Infineon OptiMOS™ 5 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP020N06NAKSA1

RS Stock No.: 906-2919PBrand: InfineonManufacturers Part No.: IPP020N06NAKSA1
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Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

15.95mm

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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P.O.A.

Each (Supplied in a Tube) (Exc. Vat)

Infineon OptiMOS™ 5 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP020N06NAKSA1
Select packaging type

P.O.A.

Each (Supplied in a Tube) (Exc. Vat)

Infineon OptiMOS™ 5 N-Channel MOSFET, 120 A, 60 V, 3-Pin TO-220 IPP020N06NAKSA1

Stock information temporarily unavailable.

Select packaging type

Stock information temporarily unavailable.

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  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
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  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Channel Type

N

Maximum Continuous Drain Current

120 A

Maximum Drain Source Voltage

60 V

Series

OptiMOS™ 5

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3 mΩ

Channel Mode

Enhancement

Maximum Power Dissipation

214 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Length

10.36mm

Typical Gate Charge @ Vgs

106 nC @ 10 V

Maximum Operating Temperature

+175 °C

Width

4.57mm

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

15.95mm

Product details

Infineon OptiMOS™5 Power MOSFETs

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more