Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Series
OptiMOS™-T
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0116 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
Stock information temporarily unavailable.
50
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
70 A
Maximum Drain Source Voltage
120 V
Package Type
TO-220
Series
OptiMOS™-T
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.0116 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Si
Number of Elements per Chip
1


