Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
386 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2
Stock information temporarily unavailable.
P.O.A.
Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
Select packaging type
Standard
1
P.O.A.
Infineon CoolMOS™ P7 Dual N-Channel MOSFET, 386 A, 650 V, 3-Pin TO-247 IPW60R024P7XKSA1
Stock information temporarily unavailable.
Select packaging type
Standard
1
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
386 A
Maximum Drain Source Voltage
650 V
Series
CoolMOS™ P7
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
0.024 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Number of Elements per Chip
2