P-channel MOSFET,IRF5210L 40A 100V

RS Stock No.: 301-625Brand: InfineonManufacturers Part No.: IRF5210LPBF
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

100 V

Package Type

TO-262

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Series

HEXFET

Minimum Operating Temperature

-55 °C

Typical Gate Charge @ Vgs

150 nC @ 10 V

Height

10.54mm

Maximum Operating Temperature

+150 °C

Length

10.54mm

Width

4.69mm

Transistor Material

Si

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P-channel MOSFET,IRF5210L 40A 100V
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P-channel MOSFET,IRF5210L 40A 100V
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Technical Document

Specifications

Channel Type

P

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

100 V

Package Type

TO-262

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Series

HEXFET

Minimum Operating Temperature

-55 °C

Typical Gate Charge @ Vgs

150 nC @ 10 V

Height

10.54mm

Maximum Operating Temperature

+150 °C

Length

10.54mm

Width

4.69mm

Transistor Material

Si

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more
You may be interested in