N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF

RS Stock No.: 170-2265Brand: InfineonManufacturers Part No.: IRF7343TRPBF
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Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.5mm

Series

IRF7343PbF

Minimum Operating Temperature

-55 °C

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P.O.A.

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF

P.O.A.

N/P-Channel-Channel MOSFET, 3.4 A, 4.7 A, 55 V Depletion, 8-Pin SO-8 Infineon IRF7343TRPBF
Stock information temporarily unavailable.

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Technical Document

Specifications

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Package Type

SO-8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

0.065 Ω, 0.17 Ω

Channel Mode

Depletion

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Maximum Gate Source Voltage

20 V

Maximum Operating Temperature

+150 °C

Length

5mm

Typical Gate Charge @ Vgs

2.3 nC @ 10 V, 24 nC @ 10 V

Width

4mm

Number of Elements per Chip

1

Forward Diode Voltage

1.2V

Height

1.5mm

Series

IRF7343PbF

Minimum Operating Temperature

-55 °C