Infineon HEXFET Dual N-Channel MOSFET Transistor & Diode, 5.4 A, 100 V, 8-Pin SO-8 IRF7490TRPBF

Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2
P.O.A.
Each (On a Reel of 4000) (Exc. Vat)
4000
P.O.A.
Each (On a Reel of 4000) (Exc. Vat)
4000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
5.4 A
Maximum Drain Source Voltage
100 V
Series
HEXFET
Package Type
SO-8
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.039 O
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
20V
Number of Elements per Chip
2