Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V
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P.O.A.
4000
P.O.A.
4000
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
14.6 A
Maximum Drain Source Voltage
30 V
Package Type
SO
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
9 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2.5 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±12 V
Width
4mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
5mm
Typical Gate Charge @ Vgs
41 nC @ 5 V
Series
IRF7809AV
Minimum Operating Temperature
-55 °C
Height
1.5mm
Forward Diode Voltage
1.3V