Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0134 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Transistor Material
Si
Number of Elements per Chip
1
P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Standard
25
P.O.A.
Each (In a Pack of 25) (Exc. Vat)
Standard
25
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
10 A
Maximum Drain Source Voltage
20 V
Package Type
SO-8
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
0.0134 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.55V
Transistor Material
Si
Number of Elements per Chip
1