Infineon HEXFET Silicon N-Channel MOSFET, 16 A, 110 V, 3-Pin DPAK IRFR3910TRLPBF
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
110 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Silicon
Number of Elements per Chip
1
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P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
Stock information temporarily unavailable.
3000
Stock information temporarily unavailable.
Ideate. Create. Collaborate
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Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
16 A
Maximum Drain Source Voltage
110 V
Package Type
DPAK (TO-252)
Series
HEXFET
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
115 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Transistor Material
Silicon
Number of Elements per Chip
1
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products