Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
Silicon
Stock information temporarily unavailable.
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Infineon HEXFET Dual Silicon N-Channel MOSFET, 72 A, 200 V, 3-Pin TO-262 IRFSL4127PBF
Select packaging type
Production pack (Tube)
2
P.O.A.
Each (Supplied in a Tube) (Exc. Vat)
Infineon HEXFET Dual Silicon N-Channel MOSFET, 72 A, 200 V, 3-Pin TO-262 IRFSL4127PBF
Stock information temporarily unavailable.
Select packaging type
Production pack (Tube)
2
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
InfineonChannel Type
N
Maximum Continuous Drain Current
72 A
Maximum Drain Source Voltage
200 V
Series
HEXFET
Package Type
TO-262
Mounting Type
Through Hole
Pin Count
3
Channel Mode
Enhancement
Number of Elements per Chip
2
Transistor Material
Silicon