N-Channel MOSFET Transistor, 38 A, 1000 V, 3-Pin PLUS264 IXYS IXFB38N100Q2

RS Stock No.: 711-5336Brand: IXYSManufacturers Part No.: IXFB38N100Q2
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Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

1000 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

890 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

20.29mm

Typical Gate Charge @ Vgs

250 nC @ 10 V

Width

5.31mm

Number of Elements per Chip

1

Height

26.59mm

Series

HiperFET, Q-Class

Minimum Operating Temperature

-55 °C

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P.O.A.

N-Channel MOSFET Transistor, 38 A, 1000 V, 3-Pin PLUS264 IXYS IXFB38N100Q2
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Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

P.O.A.

N-Channel MOSFET Transistor, 38 A, 1000 V, 3-Pin PLUS264 IXYS IXFB38N100Q2
Stock information temporarily unavailable.
Select packaging type

Select packaging type

Standard - each

Available in multiples of 1.

Production -

Available in multiples of 1.

Recommended for ordering in large quantities. Items are packaged ready for insertion into machinery, allowing you to improve production efficiency.

1

Available in multiples of 1
1P.O.A.
2P.O.A.
3P.O.A.
4P.O.A.
5P.O.A.
6P.O.A.
7P.O.A.
8P.O.A.
9P.O.A.
10P.O.A.
11P.O.A.
12P.O.A.
13P.O.A.
14P.O.A.
15P.O.A.

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more

Technical Document

Specifications

Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

1000 V

Package Type

PLUS264

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

250 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

890 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Maximum Operating Temperature

+150 °C

Length

20.29mm

Typical Gate Charge @ Vgs

250 nC @ 10 V

Width

5.31mm

Number of Elements per Chip

1

Height

26.59mm

Series

HiperFET, Q-Class

Minimum Operating Temperature

-55 °C

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more