IXYS HiperFET, Q-Class N-Channel MOSFET, 48 A, 600 V, 3-Pin TO-264 IXFK48N60Q3
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Q-Class
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
1 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
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P.O.A.
Each (In a Tube of 25) (Exc. Vat)
25
P.O.A.
Each (In a Tube of 25) (Exc. Vat)
25
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Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
48 A
Maximum Drain Source Voltage
600 V
Series
HiperFET, Q-Class
Package Type
TO-264
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
140 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
6.5V
Maximum Power Dissipation
1 kW
Transistor Configuration
Single
Maximum Gate Source Voltage
-30 V, +30 V
Width
5.13mm
Transistor Material
Si
Number of Elements per Chip
1
Length
19.96mm
Typical Gate Charge @ Vgs
140 nC @ 10 V
Maximum Operating Temperature
+150 °C
Height
26.16mm
Minimum Operating Temperature
-55 °C
Country of Origin
United States
Product details
N-channel Power MOSFET, IXYS HiperFET™ Q3 Series
The IXYS Q3 class of HiperFET™ Power MOSFETs are suitable for both hard switching and resonant mode applications, and offer low gate charge with exceptional ruggedness. The devices incorporate a fast intrinsic diode and are available in a variety of industry-standard packages including isolated types, with ratings of up to 1100V and 70A. Typical applications include DC-DC converters, battery chargers, switch-mode and resonant-mode power supplies, DC Choppers, temperature and lighting control.
Fast intrinsic rectifier diode
Low RDS(on) and QG (gate charge)
Low intrinsic gate resistance
Industry standard packages
Low package inductance
High power density
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products