Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
100 V
Series
Polar HiPerFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
680 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
235 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.6mm
Country of Origin
Philippines
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
P.O.A.
Each (In a Tube of 10) (Exc. Vat)
10
P.O.A.
Each (In a Tube of 10) (Exc. Vat)
10
Stock information temporarily unavailable.
Please check again later.
Technical Document
Specifications
Brand
IXYSChannel Type
N
Maximum Continuous Drain Current
200 A
Maximum Drain Source Voltage
100 V
Series
Polar HiPerFET
Package Type
SOT-227
Mounting Type
Screw Mount
Pin Count
4
Maximum Drain Source Resistance
7.5 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V
Maximum Power Dissipation
680 W
Maximum Gate Source Voltage
-20 V, +20 V
Number of Elements per Chip
1
Width
25.07mm
Length
38.23mm
Typical Gate Charge @ Vgs
235 nC @ 10 V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.5V
Height
9.6mm
Country of Origin
Philippines
Product details
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS