Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
960 mW
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
180 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.7 x 6.7 x 3.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details
General Purpose NPN Transistors, Nexperia
Bipolar Transistors, Nexperia
Stock information temporarily unavailable.
Please check again later.
P.O.A.
1000
P.O.A.
1000
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
1 A
Maximum Collector Emitter Voltage
80 V
Package Type
SOT-223 (SC-73)
Mounting Type
Surface Mount
Maximum Power Dissipation
960 mW
Minimum DC Current Gain
63
Transistor Configuration
Single
Maximum Collector Base Voltage
100 V
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
180 MHz
Pin Count
4
Number of Elements per Chip
1
Dimensions
1.7 x 6.7 x 3.7mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
Product details