Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel MOSFET, Nexperia
MOSFET Transistors, NXP Semiconductors
P.O.A.
Each (On a Reel of 100) (Exc. Vat)
Standard
100
P.O.A.
Each (On a Reel of 100) (Exc. Vat)
Stock information temporarily unavailable.
Standard
100
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
NexperiaChannel Type
P
Maximum Continuous Drain Current
150 mA
Maximum Drain Source Voltage
50 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
7.5 Ω
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
2.1V
Minimum Gate Threshold Voltage
1.1V
Maximum Power Dissipation
310 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Width
1.35mm
Transistor Material
Si
Number of Elements per Chip
1
Length
2.2mm
Typical Gate Charge @ Vgs
0.26 nC @ 5 V
Maximum Operating Temperature
+150 °C
Height
1mm
Minimum Operating Temperature
-55 °C
Product details


