Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details
Small Signal NPN Transistors
Bipolar Transistors, Nexperia
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P.O.A.
50
P.O.A.
50
Technical Document
Specifications
Brand
NexperiaTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
40 V
Package Type
SOT-23 (TO-236AB)
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Minimum DC Current Gain
100
Transistor Configuration
Single
Maximum Collector Base Voltage
75 V
Maximum Emitter Base Voltage
6 V
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
1 x 3 x 1.4mm
Country of Origin
China
Product details