Technical Document
Specifications
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.
Bipolar Transistors, Nexperia
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
25
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.
25
Stock information temporarily unavailable.
Technical Document
Specifications
Country of Origin
Malaysia
Product details
Low Saturation Voltage NPN Transistors
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage NPN Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.


