NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

RS Stock No.: 112-5510Brand: NXPManufacturers Part No.: PMBFJ177,215
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Technical Document

Specifications

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23

P.O.A.

NXP PMBFJ177,215 P-Channel JFET, 30 V, Idss 1.5 to 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

NXP

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Source Voltage

30 V

Maximum Gate Source Voltage

+30 V

Maximum Drain Gate Voltage

30V

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Dimensions

3 x 1.4 x 1mm

Minimum Operating Temperature

-65 °C

Height

1mm

Maximum Operating Temperature

+150 °C

Length

3mm

Width

1.4mm

Country of Origin

China

Product details

P-channel JFET, NXP

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.