Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
10 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
8500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+175 °C
Country of Origin
Malaysia
Product details
RF Bipolar Transistors, NXP
Bipolar Transistors, NXP
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P.O.A.
12000
P.O.A.
12000
Technical Document
Specifications
Brand
NXPTransistor Type
NPN
Maximum DC Collector Current
50 mA
Maximum Collector Emitter Voltage
10 V
Package Type
UMT
Mounting Type
Surface Mount
Maximum Power Dissipation
250 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
20 V
Maximum Emitter Base Voltage
1.5 V
Maximum Operating Frequency
8500 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
1 x 2.2 x 1.35mm
Maximum Operating Temperature
+175 °C
Country of Origin
Malaysia
Product details