Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Package Type
IPAK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V dc, ±30 V ac
Width
2.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
7.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China
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P.O.A.
1800
P.O.A.
1800
Technical Document
Specifications
Brand
ON SemiconductorChannel Type
N
Maximum Continuous Drain Current
6 A
Maximum Drain Source Voltage
800 V
Package Type
IPAK
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
850 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.5V
Minimum Gate Threshold Voltage
2.5V
Maximum Power Dissipation
75 W
Transistor Configuration
Single
Maximum Gate Source Voltage
±20 V dc, ±30 V ac
Width
2.5mm
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Length
6.8mm
Typical Gate Charge @ Vgs
22 nC @ 10 V
Height
7.57mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
1.2V
Country of Origin
China