onsemi FGH75T65SHDTLN4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

RS Stock No.: 181-1867Brand: onsemiManufacturers Part No.: FGH75T65SHDTLN4
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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

455 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

3710pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Country of Origin

China

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P.O.A.

onsemi FGH75T65SHDTLN4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

P.O.A.

onsemi FGH75T65SHDTLN4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Maximum Continuous Collector Current

150 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

455 W

Number of Transistors

1

Package Type

TO-247

Mounting Type

Through Hole

Channel Type

P

Pin Count

4

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

15.8 x 5.2 x 22.74mm

Minimum Operating Temperature

-55 °C

Gate Capacitance

3710pF

Maximum Operating Temperature

+175 °C

Energy Rating

160mJ

Country of Origin

China