onsemi MJ11021G Dual PNP Darlington Transistor, -30 A 250 V HFE:100, 2-Pin TO-204
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-30 A
Maximum Collector Emitter Voltage
250 V
Maximum Emitter Base Voltage
-50 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
2
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
-3.8 V
Maximum Collector Base Voltage
-250 V
Maximum Collector Emitter Saturation Voltage
-3.4 V
Maximum Operating Temperature
+200 °C
Height
8.51mm
Maximum Power Dissipation
175 W
Minimum Operating Temperature
-65 °C
Dimensions
21.08 (Dia.) x 8.51mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
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P.O.A.
100
P.O.A.
100
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
-30 A
Maximum Collector Emitter Voltage
250 V
Maximum Emitter Base Voltage
-50 V
Package Type
TO-204
Mounting Type
Through Hole
Pin Count
2
Transistor Configuration
Single
Number of Elements per Chip
2
Minimum DC Current Gain
100
Maximum Base Emitter Saturation Voltage
-3.8 V
Maximum Collector Base Voltage
-250 V
Maximum Collector Emitter Saturation Voltage
-3.4 V
Maximum Operating Temperature
+200 °C
Height
8.51mm
Maximum Power Dissipation
175 W
Minimum Operating Temperature
-65 °C
Dimensions
21.08 (Dia.) x 8.51mm
Product details
PNP Darlington Transistors, ON Semiconductor
Standards
Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products