ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

RS Stock No.: 163-0963Brand: onsemiManufacturers Part No.: MMBFJ177LT1G
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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Country of Origin

China

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.

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P.O.A.

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23

P.O.A.

ON Semiconductor MMBFJ177LT1G P-Channel JFET, Idss 1.5 to 20mA, 3-Pin SOT-23
Stock information temporarily unavailable.

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Technical Document

Specifications

Brand

onsemi

Channel Type

P

Idss Drain-Source Cut-off Current

1.5 to 20mA

Maximum Drain Gate Voltage

25V dc

Transistor Configuration

Single

Configuration

Single

Maximum Drain Source Resistance

300 Ω

Mounting Type

Surface Mount

Package Type

SOT-23

Pin Count

3

Source Gate On-Capacitance

11pF

Dimensions

3.04 x 1.4 x 1.01mm

Height

1.01mm

Width

1.4mm

Minimum Operating Temperature

-55 °C

Maximum Operating Temperature

+150 °C

Length

3.04mm

Country of Origin

China

Product details

P-channel JFET, ON Semiconductor

JFET Transistors

A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.