Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
156 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
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Technical Document
Specifications
Brand
ON SemiconductorMaximum Continuous Collector Current
30 A
Maximum Collector Emitter Voltage
1200 V
Maximum Gate Emitter Voltage
±20V
Maximum Power Dissipation
156 W
Package Type
TO-247
Mounting Type
Through Hole
Channel Type
N
Pin Count
3
Transistor Configuration
Single
Dimensions
16.26 x 5.3 x 21.08mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C