Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
180 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Product details
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (Supplied in a Bag) (Exc. Vat)
Production pack (Bag)
200
P.O.A.
Each (Supplied in a Bag) (Exc. Vat)
Production pack (Bag)
200
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
600 mA
Maximum Collector Emitter Voltage
160 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
625 mW
Transistor Configuration
Single
Maximum Collector Base Voltage
180 V
Maximum Emitter Base Voltage
6 V
Maximum Operating Frequency
100 MHz
Pin Count
3
Number of Elements per Chip
1
Maximum Operating Temperature
+150 °C
Dimensions
5.2 x 4.19 x 5.33mm
Product details
Small Signal NPN Transistors, Over 100V, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.