Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Country of Origin
China
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P.O.A.
Standard
25
P.O.A.
Standard
25
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
100 V
Package Type
TO-92
Mounting Type
Through Hole
Maximum Power Dissipation
830 mW
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
5.2 x 4.19 x 5.33mm
Maximum Operating Temperature
+150 °C
Height
5.33mm
Country of Origin
China