Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-90 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
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P.O.A.
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P.O.A.
50
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum DC Collector Current
-3 A
Maximum Collector Emitter Voltage
-90 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
25
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
1 MHz
Pin Count
3
Number of Elements per Chip
1
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Country of Origin
China