Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Height
9.28mm
Country of Origin
China
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Collector Emitter Voltage
-100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
65 W
Minimum DC Current Gain
30
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Configuration
Single
Dimensions
10.53 x 4.83 x 9.28mm
Maximum Operating Temperature
+150 °C
Height
9.28mm
Country of Origin
China