Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
80 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
36 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
P.O.A.
Each (In a Box of 500) (Exc. Vat)
500
P.O.A.
Each (In a Box of 500) (Exc. Vat)
Stock information temporarily unavailable.
500
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
80 V dc
Package Type
TO-225
Mounting Type
Through Hole
Maximum Power Dissipation
36 W
Minimum DC Current Gain
40
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
7.8 x 3 x 11.1mm
Maximum Operating Temperature
+150 °C
Country of Origin
China