Technical Document
Specifications
Brand
onsemiDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
12V
Minimum Breakdown Voltage
5.2V
Mounting Type
Surface Mount
Package Type
X2DFN
Maximum Reverse Stand-off Voltage
5V
Pin Count
2
Peak Pulse Power Dissipation
250mW
Maximum Peak Pulse Current
6A
ESD protection
Yes
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
0.66 x 0.36 x 0.28mm
Maximum Operating Temperature
+150 °C
Height
0.28mm
Width
0.36mm
Test Current
1mA
Maximum Reverse Leakage Current
100nA
Working Voltage
5V
Capacitance
10pF
Length
0.66mm
Country of Origin
China
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P.O.A.
8000
P.O.A.
8000
Technical Document
Specifications
Brand
onsemiDirection Type
Bi-Directional
Diode Configuration
Single
Maximum Clamping Voltage
12V
Minimum Breakdown Voltage
5.2V
Mounting Type
Surface Mount
Package Type
X2DFN
Maximum Reverse Stand-off Voltage
5V
Pin Count
2
Peak Pulse Power Dissipation
250mW
Maximum Peak Pulse Current
6A
ESD protection
Yes
Number of Elements per Chip
1
Minimum Operating Temperature
-55 °C
Dimensions
0.66 x 0.36 x 0.28mm
Maximum Operating Temperature
+150 °C
Height
0.28mm
Width
0.36mm
Test Current
1mA
Maximum Reverse Leakage Current
100nA
Working Voltage
5V
Capacitance
10pF
Length
0.66mm
Country of Origin
China