Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
6.5 A, 9 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
24 mΩ, 54 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
14 nC @ 10 V, 17 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
2.39mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Production pack (Reel)
5
P.O.A.
Production pack (Reel)
5
Technical Document
Specifications
Brand
onsemiChannel Type
N, P
Maximum Continuous Drain Current
6.5 A, 9 A
Maximum Drain Source Voltage
40 V
Package Type
DPAK (TO-252)
Series
PowerTrench
Mounting Type
Surface Mount
Pin Count
5
Maximum Drain Source Resistance
24 mΩ, 54 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
3V
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
3.1 W
Transistor Configuration
Common Drain
Maximum Gate Source Voltage
-20 V, +20 V
Width
6.22mm
Transistor Material
Si
Typical Gate Charge @ Vgs
14 nC @ 10 V, 17 nC @ 10 V
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
6.73mm
Height
2.39mm
Minimum Operating Temperature
-55 °C
Product details
PowerTrench® Dual N/P-Channel MOSFET, Fairchild Semiconductor
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density. They combine small gate charge(Qg), small reverse recovery charge(Qrr) and soft reverse recovery body diode, which contributes to fast switching of synchronous rectification in AC/DC power supplies.
The latest PowerTrench® MOSFETs, employ shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generation.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuit or replace a higher voltage rating MOSFET.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.