Dual N-Channel MOSFET, 6.3 A, 8.6 A, 30 V, 8-Pin SOIC onsemi FDS6982AS
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
6.3 A, 8.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ, 28 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V, 21 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
3.99mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Series
PowerTrench, SyncFET
Product details
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Standard
5
P.O.A.
Each (In a Pack of 5) (Exc. Vat)
Stock information temporarily unavailable.
Standard
5
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
6.3 A, 8.6 A
Maximum Drain Source Voltage
30 V
Package Type
SOIC
Mounting Type
Surface Mount
Pin Count
8
Maximum Drain Source Resistance
14 mΩ, 28 mΩ
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
1V
Maximum Power Dissipation
2 W
Transistor Configuration
Isolated
Maximum Gate Source Voltage
-20 V, +20 V
Typical Gate Charge @ Vgs
11 nC @ 10 V, 21 nC @ 10 V
Transistor Material
Si
Number of Elements per Chip
2
Maximum Operating Temperature
+150 °C
Length
5mm
Width
3.99mm
Minimum Operating Temperature
-55 °C
Height
1.5mm
Series
PowerTrench, SyncFET
Product details
PowerTrench® SyncFET™ Dual MOSFET, Fairchild Semiconductor
Designed to minimise losses in power conversion, while maintaining excellent switching performance
High Performance Trench Technology for extremely low RDS(on)
SyncFET™ benefits from an efficient Schottky body diode
Applications in Synchronous Rectification DC-DC Converter, Motor Drives, networking point of load Low Side Switch
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products