Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
30 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
12 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
20
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Stock information temporarily unavailable.
Production pack (Reel)
20
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
4 A
Maximum Collector Emitter Voltage
400 V
Package Type
DPAK (TO-252)
Mounting Type
Surface Mount
Maximum Power Dissipation
30 W
Minimum DC Current Gain
8
Transistor Configuration
Single
Maximum Collector Base Voltage
700 V
Maximum Emitter Base Voltage
12 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
6.73 x 6.22 x 2.39mm
Maximum Operating Temperature
+150 °C
Product details
High Voltage NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.


