Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 18.95mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
P.O.A.
Each (In a Tube of 50) (Exc. Vat)
50
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Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum DC Collector Current
7 A
Maximum Collector Emitter Voltage
100 V
Package Type
TO-220
Mounting Type
Through Hole
Maximum Power Dissipation
40 W
Minimum DC Current Gain
120
Transistor Configuration
Single
Maximum Collector Base Voltage
150 V
Maximum Emitter Base Voltage
7 V
Pin Count
3
Number of Elements per Chip
1
Dimensions
9.9 x 4.5 x 18.95mm
Maximum Operating Temperature
+150 °C
Product details
Power NPN Transistors, Fairchild Semiconductor
Bipolar Transistors, Fairchild Semiconductor
Bipolar Junction Transistors (BJT) broad range provides complete solutions for various circuit application needs. Innovative packages are designed for minimal size, highest reliability and maximum thermal performance.