Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
230 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China
P.O.A.
Each (In a Tube of 30) (Exc. Vat)
30
P.O.A.
Each (In a Tube of 30) (Exc. Vat)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
Technical Document
Specifications
Brand
onsemiTransistor Type
NPN
Maximum Collector Emitter Voltage
230 V
Package Type
TO-247
Mounting Type
Through Hole
Maximum Power Dissipation
200 W
Transistor Configuration
Single
Maximum Emitter Base Voltage
5 V dc
Pin Count
3
Number of Elements per Chip
1
Dimensions
16.26 x 5.3 x 21.08mm
Maximum Operating Temperature
+150 °C
Country of Origin
China


