onsemi MMBF4393LT1G N-Channel JFET, 30 V, Idss 5 to 30mA, 3-Pin SOT-23
Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
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P.O.A.
Production pack (Reel)
50
P.O.A.
Production pack (Reel)
50
Ideate. Create. Collaborate
JOIN FOR FREE
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Idss Drain-Source Cut-off Current
5 to 30mA
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
+30 V
Maximum Drain Gate Voltage
30V
Configuration
Single
Transistor Configuration
Single
Maximum Drain Source Resistance
100 Ω
Mounting Type
Surface Mount
Package Type
SOT-23
Pin Count
3
Drain Gate On-Capacitance
14pF
Source Gate On-Capacitance
14pF
Dimensions
3.04 x 1.4 x 1.01mm
Minimum Operating Temperature
-55 °C
Maximum Operating Temperature
+150 °C
Length
3.04mm
Height
1.01mm
Width
1.4mm
Product details
N-channel JFET, ON Semiconductor
JFET Transistors
A range of JFET (junction field-effect transistor) and HEMT/HFET (high-electron-mobility transistor/ hetero-junction FET) discrete semiconductor devices.
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products