Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Product details
P-Channel Power MOSFET, 30V to 500V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
2
P.O.A.
Each (Supplied on a Reel) (Exc. Vat)
Production pack (Reel)
2
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
2.6 A
Maximum Drain Source Voltage
60 V
Package Type
SOT-223
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
185 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4V
Maximum Power Dissipation
2.3 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-20 V, +20 V
Transistor Material
Si
Number of Elements per Chip
1
Length
6.5mm
Maximum Operating Temperature
+175 °C
Typical Gate Charge @ Vgs
14.3 nC @ 10 V
Width
3.5mm
Height
1.57mm
Minimum Operating Temperature
-55 °C
Product details