onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG

RS Stock No.: 186-1287Brand: onsemiManufacturers Part No.: NTMTS0D6N04CLTXG
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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

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Stock information temporarily unavailable.

P.O.A.

Each (On a Reel of 3000) (Exc. Vat)

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

P.O.A.

Each (On a Reel of 3000) (Exc. Vat)

onsemi N-Channel MOSFET, 554.5 A, 40 V, 8-Pin DFNW8 NTMTS0D6N04CLTXG
Stock information temporarily unavailable.

3000

Available in multiples of 3000
3000P.O.A.
6000P.O.A.
9000P.O.A.
12000P.O.A.
15000P.O.A.
18000P.O.A.
21000P.O.A.
24000P.O.A.
27000P.O.A.
30000P.O.A.
33000P.O.A.
36000P.O.A.
39000P.O.A.
42000P.O.A.
45000P.O.A.

Stock information temporarily unavailable.

Please check again later.

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Technical Document

Specifications

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

554.5 A

Maximum Drain Source Voltage

40 V

Package Type

DFNW8

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

660 μΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1.2V

Maximum Power Dissipation

245.4 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±20 V

Number of Elements per Chip

1

Width

8mm

Length

8.1mm

Typical Gate Charge @ Vgs

126 nC @ 4.5 V

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Forward Diode Voltage

1.2V

Height

1.15mm

Ideate. Create. Collaborate

JOIN FOR FREE

No hidden fees!

design-spark
design-spark
  • Download and use our DesignSpark software for your PCB and 3D Mechanical designs
  • View and contribute website content and forums
  • Download 3D Models, Schematics and Footprints from more than a million products
Click here to find out more