onsemi P-Channel MOSFET, 1.37 A, 20 V, 3-Pin SOT-323 NTS4101PT1G
Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.37 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
329 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.9mm
Country of Origin
China
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
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P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
P.O.A.
Each (On a Reel of 3000) (Exc. Vat)
3000
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Technical Document
Specifications
Brand
onsemiChannel Type
P
Maximum Continuous Drain Current
1.37 A
Maximum Drain Source Voltage
20 V
Package Type
SOT-323
Mounting Type
Surface Mount
Pin Count
3
Maximum Drain Source Resistance
160 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
1.5V
Maximum Power Dissipation
329 mW
Transistor Configuration
Single
Maximum Gate Source Voltage
-8 V, +8 V
Number of Elements per Chip
1
Width
1.35mm
Length
2.2mm
Typical Gate Charge @ Vgs
6.4 nC @ 4.5 V
Transistor Material
Si
Maximum Operating Temperature
+150 °C
Minimum Operating Temperature
-55 °C
Height
0.9mm
Country of Origin
China
Product details
P-Channel Power MOSFET, 20V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products