onsemi SiC N-Channel MOSFET, 44 A, 1200 V, 3-Pin TO-247 NVHL080N120SC1
Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101
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P.O.A.
Each (In a Tube of 30) (Exc. Vat)
30
P.O.A.
Each (In a Tube of 30) (Exc. Vat)
Stock information temporarily unavailable.
30
Stock information temporarily unavailable.
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Technical Document
Specifications
Brand
onsemiChannel Type
N
Maximum Continuous Drain Current
44 A
Maximum Drain Source Voltage
1200 V
Package Type
TO-247
Mounting Type
Through Hole
Pin Count
3
Maximum Drain Source Resistance
162 mΩ
Channel Mode
Enhancement
Maximum Gate Threshold Voltage
4.3V
Minimum Gate Threshold Voltage
1.8V
Maximum Power Dissipation
348 W
Transistor Configuration
Single
Maximum Gate Source Voltage
-15 V, +25 V
Width
4.82mm
Transistor Material
SiC
Number of Elements per Chip
1
Length
15.87mm
Typical Gate Charge @ Vgs
56 nC @ 20 V
Maximum Operating Temperature
+175 °C
Height
20.82mm
Minimum Operating Temperature
-55 °C
Forward Diode Voltage
4V
Automotive Standard
AEC-Q101
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products