onsemi TIP117G PNP Darlington Transistor, 2 (Continuous) A, 4 (Peak) A 100 V dc HFE:500, 3-Pin TO-220
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Width
4.83mm
Maximum Power Dissipation
50 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
50mA
Height
15.75mm
Country of Origin
China
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P.O.A.
50
P.O.A.
50
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Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
2 (Continuous) A, 4 (Peak) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
500
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
2.5 V dc
Maximum Collector Cut-off Current
2mA
Width
4.83mm
Maximum Power Dissipation
50 W
Minimum Operating Temperature
-65 °C
Dimensions
10.53 x 4.83 x 15.75mm
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
50mA
Height
15.75mm
Country of Origin
China
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products