Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
2A
Country of Origin
China
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P.O.A.
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P.O.A.
50
Technical Document
Specifications
Brand
onsemiTransistor Type
PNP
Maximum Continuous Collector Current
10 (Peak) A, 6 (Continuous) A
Maximum Collector Emitter Voltage
100 V dc
Maximum Emitter Base Voltage
5 V dc
Package Type
TO-220
Mounting Type
Through Hole
Pin Count
3
Transistor Configuration
Single
Configuration
Single
Number of Elements per Chip
1
Minimum DC Current Gain
15
Maximum Collector Base Voltage
100 V dc
Maximum Collector Emitter Saturation Voltage
1.5 V dc
Maximum Collector Cut-off Current
400µA
Dimensions
10.53 x 4.83 x 15.75mm
Height
15.75mm
Width
4.83mm
Maximum Power Dissipation
65 W
Minimum Operating Temperature
-65 °C
Maximum Operating Temperature
+150 °C
Length
10.53mm
Base Current
2A
Country of Origin
China