OSI Optoelectronics, PIN-UV-100DQC UV Si Photodiode, Through Hole Ceramic
Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Ultraviolet
Wavelength of Peak Sensitivity
980nm
Package Type
Ceramic
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
190nm
Maximum Wavelength Detected
1100nm
Length
16.51mm
Width
14.99mm
Height
2.03mm
Peak Photo Sensitivity
0.5A/W
Polarity
Reverse
Country of Origin
United States
Product details
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
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P.O.A.
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P.O.A.
2
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Technical Document
Specifications
Brand
OSI OptoelectronicsSpectrums Detected
Ultraviolet
Wavelength of Peak Sensitivity
980nm
Package Type
Ceramic
Mounting Type
Through Hole
Amplifier Function
No
Number of Pins
2
Diode Material
Si
Minimum Wavelength Detected
190nm
Maximum Wavelength Detected
1100nm
Length
16.51mm
Width
14.99mm
Height
2.03mm
Peak Photo Sensitivity
0.5A/W
Polarity
Reverse
Country of Origin
United States
Product details
OSI UV Enhanced Series Photodiodes
The UV Enhanced series, from OSI Optoelectronics, are a range of UV enhanced silicon photodiodes. This series includes two seperate families of photodiodes, inversion channel and planar diffused. Both of these families are designed for low noise detection in the UV region of the electromagnetic spectrum.
The inversion layer structure family exhibit 100% internal quantum efficiency. Offering high shunt resistance, low noise and high breakdown voltages, this family of photodiodes are idea for low intensity light measurements.
Photodiodes with the planar diffused structure offer a lower capacitance and higher response time compared to the inversion later family. They also show linearity of photocurrent up to higher light input power compared to the inversion layer photodiodes.
Suitable applications for the UV Enhanced series includes; pollution monitoring, medical instrumentation, UV exposure meters, spectroscopy, water purification and fluorescence.
Features of the UV Enhanced series:
Inversion layers or planar diffused silicon photodiodes
Excellent UV response
Photodiodes, OSI Optoelectronics
Ideate. Create. Collaborate
JOIN FOR FREE
No hidden fees!
- Download and use our DesignSpark software for your PCB and 3D Mechanical designs
- View and contribute website content and forums
- Download 3D Models, Schematics and Footprints from more than a million products